Volume : 1, Issue : 2, DEC 2015
EFFECT OF DIP TIME ON THE STRUCTURAL AND OPTICAL PROPERTIES OF CuAlSe FILMS.
Okereke N. A
Abstract
Ternary semiconductor chalcopyrite films of CuAlSe are prepared by chemical bath deposition technique on a microscopic glass substrates 2 from an aqueous solution containing copper chloride, aluminium chloride and freshly refluxed sodium selonosulphate. The influence of dip time on the properties of CuAlSe films was investigated. The X-ray diffraction analysis showed that the deposited films were polycrystalline with 2 chalcopyrite structure having a strong orientation along the (200) plane. The surface morphology study revealed that the grains have cubic shape crystal. The band gap energy was decreased from 2.6 eV to 2.4eV as the dip time was increased from 12hours to 24hours. The film grown at 24 hours showed good crystallinity. It was also, uniformly distributed over the surface of the substrate with larger grain sizes. Therefore, the optimum deposition time for the synthesis of chemically deposited CuAlSe films is 24 hours.
Keywords
Chalcopyrite, CuAlSe2, chemical bath, x-ray diffraction, band gap energy.
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